Iii-group nitrdie semiconductor thin film, iii-group nitrdie semiconductor light emitting device and fabrication method of iii-group nitrdie semiconductor thin film

Ⅲ족 질화물 반도체 박막, Ⅲ족 질화물 반도체 발광소자 및Ⅲ족 질화물 반도체 박막의 제조방법

Abstract

A III-group nitride semiconductor thin film, a III-group nitride semiconductor light emitting device, and a method of manufacturing the III-group nitride semiconductor thin film are provided to improve a light emitting speed of a blue LED by forming the LED on a desirable a-surface GaN thin film. A III-group nitride semiconductor thin film includes a sapphire substrate, an epitaxial growth layer(202), and an active layer(204). The (1-102)-surface sapphire substrate has an off-angle between -0.9 and -0.1 ° with respect to a C3 crystal axis. The epitaxial growth layer is arranged on the sapphire substrate and made of a (11-20)-surface gallium nitride. The active layer is made of a III-group nitride, which is formed by using the epitaxial growth layer as a base. A thickness of the epitaxial growth layer is greater than 3 mum. NH3 is introduced before trimethylgalium is introduced, such that the gallium nitride is grown.
양질의 III족 질화물 반도체 박막 및 이를 사용한 III족 질화물 반도체 발광소자를 제공하는 것이다. C3결정축에 대해 -0.9°∼ -0.1°의 오프각을 갖는 (1-102)면(소위, r면)의 사파이어 기판(110)상에 사파이어 기판(110)의 온도를 1100℃∼1400℃의 범위 내로 제어하면서, 트리메틸갈륨을 200∼500μmol/min의 유량으로 도입함으로써, 사파이어 기판(110) 상에 (11-20) 면(소위, a면)의 GaN층(120)을 에피택셜 성장시킨다. 이로써, 양질의 III족 질화물 반도체 박막(a면 GaN층)을 얻는다. 또한, 그 III족 질화물 반도체 박막을 기판으로 하여 III족 질화물 반도체 발광소자를 제조한다.

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    KR-20110097004-AAugust 31, 2011엘지전자 주식회사Method for growing nitride semiconductor film
    WO-2014035021-A1March 06, 2014Lg Electronics Inc.Substrat non polaire ayant une hétérostructure, son procédé de fabrication et dispositif électroluminescent à base de nitrure l'utilisant